VISHAY SI7716ADN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7716ADN-T1-GE3

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage30V
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3.5W;27.7W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)13.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)846pF

Technical details

N-Channel 30V 16A 3.5W 27.7W Surface Mount PowerPAK1212-8

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