VISHAY SI7658ADP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7658ADP-T1-GE3

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Specifications

Configuration-
Drain to Source Voltage30V
Gate Charge(Qg)110nC@10V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)2.8mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)-

Technical details

N-Channel 30V 83W Surface Mount SO-8

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