VISHAY SI7655DN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7655DN-T1-GE3

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Specifications

Gate Charge(Qg)72nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)31A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))500mV
Pd - Power Dissipation4.8W
Reverse Transfer Capacitance (Crss@Vds)930pF
RDS(on)8.5mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)6.6nF
TypeP-Channel

Technical details

P-Channel 20V 31A 4.8W Surface Mount SMD

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