VISHAY SI7655ADN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7655ADN-T1-GE3

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Specifications

Configuration-
Gate Charge(Qg)150nC@10V
Drain to Source Voltage20V
Output Capacitance(Coss)890pF
Current - Continuous Drain(Id)40A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation57W
Reverse Transfer Capacitance (Crss@Vds)930pF
RDS(on)9mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)6.6nF

Technical details

P-Channel 20V 40A 57W Surface Mount PowerPAK1212-8S

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