VISHAY SI7636DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7636DP-T1-GE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)50nC@4.5V
Output Capacitance(Coss)860pF
Current - Continuous Drain(Id)28A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3.3W
Reverse Transfer Capacitance (Crss@Vds)415pF
RDS(on)4.8mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)5.6nF
TypeN-Channel

Technical details

30V 28A 3V 3.3W 4.8mΩ@4.5V 1 N-channel N-Channel PowerPAKSO-8 Single FETs, MOSFETs RoHS

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