VISHAY SI7634BDP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7634BDP-T1-GE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)21.5nC@10V
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation5W
RDS(on)5.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.15nF

Technical details

30V 40A 1.4V 5W 5.4mΩ@10V 1 N-channel SO-8 Single FETs, MOSFETs RoHS

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