VISHAY · FETs & Power MOSFETs · MPN SI7629DN-T1-GE3
No reviews yet — be the first to review VISHAY SI7629DN-T1-GE3.
| Gate Charge(Qg) | 59nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 52W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 11.7mΩ@2.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | - |
| Type | P-Channel |
P-Channel 20V 35A 52W Surface Mount PowerPAK1212-8