VISHAY · FETs & Power MOSFETs · MPN SI7619DN-T1-GE3
No reviews yet — be the first to review VISHAY SI7619DN-T1-GE3.
| Gate Charge(Qg) | 32nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 215pF |
| Current - Continuous Drain(Id) | 24A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 27.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 185pF |
| RDS(on) | 34mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.35nF |
| Type | P-Channel |
P-Channel 30V 27.8W Surface Mount PowerPAK1212-8