VISHAY SI7615DN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7615DN-T1-GE3

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage20V
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation3.7W;52W
Reverse Transfer Capacitance (Crss@Vds)183pF
RDS(on)3.9mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)6nF

Technical details

P-Channel 20V 35A 3.7W 52W Surface Mount PowerPAK1212-8

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