VISHAY SI7615CDN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7615CDN-T1-GE3

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Specifications

Configuration-
Gate Charge(Qg)111nC@8V
Drain to Source Voltage20V
Output Capacitance(Coss)425pF
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation33W
Reverse Transfer Capacitance (Crss@Vds)390pF
RDS(on)20.3mΩ@1.8V
Number1 P-Channel
Input Capacitance(Ciss)3.86nF

Technical details

P-Channel 20V 35A 33W Surface Mount PowerPAK1212-8

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