VISHAY · FETs & Power MOSFETs · MPN SI7615ADN-T1-GE3
No reviews yet — be the first to review VISHAY SI7615ADN-T1-GE3.
| Gate Charge(Qg) | 59nC@10V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Pd - Power Dissipation | 33W |
| Reverse Transfer Capacitance (Crss@Vds) | 183pF |
| RDS(on) | 4.4mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 5.59nF |
| Type | P-Channel |
P-Channel 20V 35A 33W Surface Mount PowerPAK1212-8