VISHAY SI7613DN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7613DN-T1-GE3

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Specifications

Configuration-
Gate Charge(Qg)43nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)535pF
Current - Continuous Drain(Id)35A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation52.1W
Reverse Transfer Capacitance (Crss@Vds)455pF
RDS(on)14mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2.62nF

Technical details

P-Channel 20V 35A 52.1W Surface Mount PowerPAK1212-8

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