VISHAY · FETs & Power MOSFETs · MPN SI7613DN-T1-GE3
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 43nC@4.5V |
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 535pF |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 52.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 455pF |
| RDS(on) | 14mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.62nF |
P-Channel 20V 35A 52.1W Surface Mount PowerPAK1212-8