VISHAY · FETs & Power MOSFETs · MPN SI7611DN-T1-GE3
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| Gate Charge(Qg) | 41nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 9.3A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 3.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 175pF |
| RDS(on) | 25mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.98nF |
40V 9.3A 3.7W 25mΩ@10V 1 P-Channel PowerPAK1212-8 Single FETs, MOSFETs RoHS