VISHAY SI7489DP-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI7489DP-T1-E3

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Specifications

Gate Charge(Qg)54nC@4.5V;106nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)230pF
Current - Continuous Drain(Id)28A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)175pF
RDS(on)47mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)4.6nF
TypeP-Channel

Technical details

P-Channel 100V 28A 83W Surface Mount PowerPAK-SO-8

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