VISHAY SI7469DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7469DP-T1-GE3

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Specifications

Gate Charge(Qg)55nC
Drain to Source Voltage80V
Output Capacitance(Coss)320pF
Current - Continuous Drain(Id)28A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation53W
Reverse Transfer Capacitance (Crss@Vds)235pF
RDS(on)25mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)4.7nF
TypeP-Channel

Technical details

P-Channel 80V 28A 53W Surface Mount PowerPAKSO-8

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