VISHAY SI7465DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7465DP-T1-GE3

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Specifications

Gate Charge(Qg)26nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation3.5W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)64mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)-
Vgs±20V
TypeP-Channel

Technical details

P-Channel 60V 5A 3.5W Surface Mount PowerPAKSO-8

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