VISHAY SI7465DP-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI7465DP-T1-E3

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Specifications

Gate Charge(Qg)26nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation940mW
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)80mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)-
TypeP-Channel

Technical details

P-Channel 60V 5A 0.94W Surface Mount PowerPAKSO-8

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