VISHAY SI7461DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7461DP-T1-GE3

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Specifications

Gate Charge(Qg)190nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)14.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3.4W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)14.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)-
TypeP-Channel

Technical details

P-Channel 60V 14.4A 3.4W Surface Mount PowerPAKSO-8

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