VISHAY SI7460DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7460DP-T1-GE3

No reviews yet — be the first to review VISHAY SI7460DP-T1-GE3.

Specifications

Gate Charge(Qg)65nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation5.4W
RDS(on)9.6mΩ@10V
Number1 N-channel
TypeN-Channel

Technical details

N-Channel 60V 18A 5.4W Surface Mount PowerPAKSO-8

Related FETs & Power MOSFETs