VISHAY · FETs & Power MOSFETs · MPN SI7456DP-T1-GE3
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| Gate Charge(Qg) | 44nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 9.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 5.2W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 28mΩ@6V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Vgs | ±20V |
N-Channel 100V 9.3A 5.2W Surface Mount PowerPAK-SO-8