VISHAY · FETs & Power MOSFETs · MPN SI7456CDP-T1-GE3
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| Gate Charge(Qg) | 23nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 425pF |
| Current - Continuous Drain(Id) | 27.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 35.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 31.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 730pF |
| Type | N-Channel |
100V 27.5A 2.8V 35.7W 31.5mΩ@4.5V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS