VISHAY SI7454DP-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI7454DP-T1-E3

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Specifications

ConfigurationHalf-Bridge
Gate Charge(Qg)30nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)7.8A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation4.8W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)40mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)-

Technical details

N-Channel 100V 7.8A 4.8W Surface Mount PowerPAKSO-8

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