VISHAY · FETs & Power MOSFETs · MPN SI7454DDP-T1-GE3
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 21A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 4.1W;29.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 19.5pF |
| RDS(on) | 33mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 550pF |
N-Channel 100V 21A 4.1W 29.7W Surface Mount PowerPAKSO-8