VISHAY · FETs & Power MOSFETs · MPN SI7450DP-T1-RE3
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| Gate Charge(Qg) | 34nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 3.2A;19.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 3.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
200V 2V 3.3W 1 N-channel Single FETs, MOSFETs RoHS