VISHAY SI7439DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7439DP-T1-GE3

No reviews yet — be the first to review VISHAY SI7439DP-T1-GE3.

Specifications

Gate Charge(Qg)88nC@10V
Drain to Source Voltage150V
Current - Continuous Drain(Id)5.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation5.4W
RDS(on)90mΩ@10V
Number1 P-Channel

Technical details

150V 5.2A 5.4W 90mΩ@10V 1 P-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs