VISHAY SI7439DP-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI7439DP-T1-E3

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)88nC@10V
Current - Continuous Drain(Id)5.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation5.4W
RDS(on)90mΩ@10V
Number1 P-Channel
TypeP-Channel

Technical details

150V 5.2A 4V 5.4W 90mΩ@10V 1 P-Channel P-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS

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