VISHAY · FETs & Power MOSFETs · MPN SI7434DP-T1-GE3
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| Gate Charge(Qg) | 50nC@10V |
|---|---|
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | 3.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 1.9W |
| RDS(on) | 162mΩ@6V |
| Number | 1 N-channel |
| Type | N-Channel |
250V 3.8A 4V 1.9W 162mΩ@6V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS