VISHAY · FETs & Power MOSFETs · MPN SI7434DP-T1-E3
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| Gate Charge(Qg) | 50nC@10V |
|---|---|
| Drain to Source Voltage | 250V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 3.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 5.2W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 162mΩ@6V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
250V 3.8A 4V 5.2W 162mΩ@6V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS