VISHAY · FETs & Power MOSFETs · MPN SI7431DP-T1-GE3
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| Gate Charge(Qg) | 88nC@10V |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 3.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 5.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 174mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 135pF |
200V 3.8A 5.4W 174mΩ@10V 1 P-Channel PDFN-8(5.9x5.2) Single FETs, MOSFETs RoHS