VISHAY SI7431DP-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI7431DP-T1-E3

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)88nC@10V
Current - Continuous Drain(Id)3.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation5.4W
RDS(on)174mΩ@10V
Number1 P-Channel
TypeP-Channel

Technical details

P-Channel 200V 3.8A 5.4W Surface Mount PowerPAKSO-8

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