VISHAY · FETs & Power MOSFETs · MPN SI7430DP-T1-GE3
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 26A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 5.2W;64W |
| RDS(on) | 45mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.735nF |
150V 26A 4.5V 45mΩ@10V 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS