VISHAY SI7423DN-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI7423DN-T1-E3

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Specifications

Gate Charge(Qg)56nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)7.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation1.5W
RDS(on)18mΩ@10V
Number1 P-Channel

Technical details

30V 7.4A 1.5W 18mΩ@10V 1 P-Channel PowerPAK1212-8 Single FETs, MOSFETs RoHS

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