VISHAY SI7421DN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7421DN-T1-GE3

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)6.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.5W
RDS(on)25mΩ@10V
Number1 P-Channel

Technical details

30V 6.4A 3V 1.5W 25mΩ@10V 1 P-Channel Single FETs, MOSFETs RoHS

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