VISHAY SI7415DN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7415DN-T1-GE3

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Specifications

ConfigurationHalf-Bridge
Gate Charge(Qg)25nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)5.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3.8W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)110mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)-

Technical details

P-Channel 60V 5.7A 3.8W Surface Mount PowerPAK1212-8

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