VISHAY SI7414DN-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI7414DN-T1-E3

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Specifications

Gate Charge(Qg)25nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)8.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3.8W
Reverse Transfer Capacitance (Crss@Vds)440pF
RDS(on)25mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1nF
TypeN-Channel

Technical details

N-Channel 60V 8.7A 3.8W Surface Mount PowerPAK1212-8

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