VISHAY SI7390DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7390DP-T1-GE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)10nC@15V
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))800mV
Pd - Power Dissipation3.2W
Number1 N-channel

Technical details

30V 15A 800mV 3.2W 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS

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