VISHAY · FETs & Power MOSFETs · MPN SI7328DN-T1-GE3
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| Gate Charge(Qg) | 31.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 3.78W;52W |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF |
| RDS(on) | 6.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.61nF |
30V 35A 1.5V 6.6mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS