VISHAY SI7328DN-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI7328DN-T1-E3

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Specifications

Gate Charge(Qg)31.5nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)35A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation3.78W;52W
Reverse Transfer Capacitance (Crss@Vds)140pF
RDS(on)6.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.61nF

Technical details

30V 35A 1.5V 6.6mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS

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