VISHAY SI7326DN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7326DN-T1-GE3

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Specifications

Gate Charge(Qg)13nC@5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)6.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)19.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)-
Vgs±25V
TypeN-Channel

Technical details

N-Channel 30V 6.5A 1.5W Surface Mount PowerPAK1212-8

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