VISHAY SI7315DN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7315DN-T1-GE3

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Specifications

Gate Charge(Qg)15.4nC@10V
Drain to Source Voltage150V
Output Capacitance(Coss)50pF
Current - Continuous Drain(Id)8.9A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation3.8W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)315mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)880pF
TypeP-Channel

Technical details

P-Channel 150V 8.9A 3.8W Surface Mount PowerPAK1212-8

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