VISHAY · FETs & Power MOSFETs · MPN SI7309DN-T1-GE3
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| Gate Charge(Qg) | 14.5nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 70pF |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 19.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 115mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 600pF |
| Vgs | ±20V |
P-Channel 60V 8A Surface Mount PowerPAK1212-8