VISHAY SI7309DN-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI7309DN-T1-E3

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Specifications

Gate Charge(Qg)22nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)70pF
Current - Continuous Drain(Id)-
Operating Temperature --
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)146mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)600pF
TypeP-Channel

Technical details

60V 3V 146mΩ@4.5V 1 P-Channel P-Channel PowerPAK1212-8 Single FETs, MOSFETs RoHS

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