VISHAY · FETs & Power MOSFETs · MPN SI7308DN-T1-GE3
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 13nC@10V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 12.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 58mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 665pF |
60V 6A 12.7W Surface Mount SMD