VISHAY SI7308DN-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI7308DN-T1-E3

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Specifications

Configuration-
Gate Charge(Qg)20nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation19.8W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)72mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)-

Technical details

N-Channel 60V 6A 19.8W Surface Mount PowerPAK1212-8

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