VISHAY SI7288DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7288DP-T1-GE3

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Specifications

Current - Continuous Drain(Id)20A
RDS(on)22mΩ@4.5V
Pd - Power Dissipation15.6W
Gate Threshold Voltage (Vgs(th))2.8V
Drain to Source Voltage40V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)42pF
Number2 N-Channel
Input Capacitance(Ciss)565pF
Gate Charge(Qg)10nC@10V
Operating Temperature-
Output Capacitance(Coss)100pF

Technical details

N-Channel Array 40V 20A 15.6W Surface Mount PowerPAKSO-8

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