VISHAY · FETs & Power MOSFETs · MPN SI7252ADP-T1-GE3
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| Current - Continuous Drain(Id) | 28.7A |
|---|---|
| Pd - Power Dissipation | 33.8W |
| RDS(on) | 22.5mΩ@7.5V |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Drain to Source Voltage | 100V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.266nF |
| Gate Charge(Qg) | 26.5nC@10V |
| Operating Temperature | -55℃~+150℃ |
N-Channel Array 100V 28.7A 33.8W Surface Mount PowerPAKSO-8