VISHAY SI7252ADP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7252ADP-T1-GE3

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Specifications

Current - Continuous Drain(Id)28.7A
Pd - Power Dissipation33.8W
RDS(on)22.5mΩ@7.5V
Gate Threshold Voltage (Vgs(th))4V
Drain to Source Voltage100V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)6pF
Number2 N-Channel
Input Capacitance(Ciss)1.266nF
Gate Charge(Qg)26.5nC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 100V 28.7A 33.8W Surface Mount PowerPAKSO-8

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