VISHAY SI7220DN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7220DN-T1-GE3

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Specifications

Current - Continuous Drain(Id)4.8A
Pd - Power Dissipation2.6W
RDS(on)75mΩ@4.5V
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)-
Gate Charge(Qg)13nC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 60V 4.8A 2.6W Surface Mount PowerPAK1212-8

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