VISHAY · FETs & Power MOSFETs · MPN SI7216DN-T1-E3
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| Configuration | - |
|---|---|
| Current - Continuous Drain(Id) | 6A |
| RDS(on) | 39mΩ@4.5V |
| Pd - Power Dissipation | 5W |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Drain to Source Voltage | 40V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 670pF |
| Gate Charge(Qg) | 19nC@10V |
| Operating Temperature | -50℃~+150℃ |
6A 39mΩ@4.5V 5W 3V 2 N-Channel PDFNWB-8(3x3) FET, MOSFET Arrays RoHS