VISHAY SI7212DN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7212DN-T1-GE3

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Specifications

Current - Continuous Drain(Id)6.8A
RDS(on)39mΩ@4.5V
Pd - Power Dissipation5W
Gate Threshold Voltage (Vgs(th))1.6V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)-
Gate Charge(Qg)11nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)-

Technical details

6.8A 39mΩ@4.5V 5W 1.6V 2 N-Channel PowerPAK1212-8 FET, MOSFET Arrays RoHS

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