VISHAY SI7192DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7192DP-T1-GE3

No reviews yet — be the first to review VISHAY SI7192DP-T1-GE3.

Specifications

Gate Charge(Qg)43.5nC@15V
Drain to Source Voltage30V
Output Capacitance(Coss)1.05nF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)440pF
RDS(on)2.25mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)5.8nF
TypeN-Channel

Technical details

N-Channel 30V 60A 104W Surface Mount PowerPAKSO-8

Related FETs & Power MOSFETs